inchange semiconductor isc rf product specification isc silicon npn rf transistor 2SC3545 description low base time constant; r bb? ? cc = 4 ps typ. high gain bandwidth product ft= 2 ghz typ. @ i e = -5ma, v ce = 10v low feedback capacitance; c re = 0.48 pf typ. applications designed for use as uhf oscillator and mixer in a tuner of a tv receiver. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 30 v v ceo collector-emitter voltage 15 v v ebo emitter-base voltage 3 v i c collector current-continuous 50 ma p c collector power dissipation @t c =25 0.15 w t j junction temperature 125 t stg storage temperature range -65~125 isc website www.iscsemi.cn
inchange semiconductor isc rf product specification isc silicon npn rf transistor 2SC3545 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce( sat ) collector-emitter saturation voltage i c = 10ma ; i b = 1ma 0.5 v i cbo collector cutoff current v cb = 12v; i e = 0 0.1 a h fe dc current gain i c = 5ma ; v ce = 10v 50 250 f t current-gain?bandwidth product i e = -5ma ; v ce = 10v 1.3 2.0 ghz c re feedback capacitance i e = 0 ; v cb = 10v;f= 1.0mhz 0.48 1.0 pf r bb? ? c c base time constant v ce = 10v,i e = -5ma,f = 31.9 mhz 4 10 ps ? h fe classifications class m/p l/q k/r marking t42 t43 t44 h fe 50-100 70-140 120-250 isc website www.iscsemi.cn 2
inchange semiconductor isc rf product specification isc silicon npn rf transistor 2SC3545 isc website www.iscsemi.cn
inchange semiconductor isc rf product specification isc silicon npn rf transistor 2SC3545 s-parameter v ce = 10 v, i c = 5 ma , z o = 50 freque . s 11 s 21 s 12 s 22 mhz mag. ang. mag. an g. mag. ang. mag. ang. 200 0.472 -80.6 7.581 114.1 0.037 60.2 0.780 -8.2 400 0.310 -117.3 4.029 92.9 0.055 55.5 0.723 -15.1 600 0.261 -139.9 2.926 81.7 0.077 60.2 0.721 -18.8 800 0.262 -160.4 2.118 70.2 0.098 62.8 0.698 -22.6 1000 0.270 -176.6 1.860 62. 8 0.108 64.6 0.691 -25.1 1200 0.288 172.3 1.504 54.4 0.125 65.7 0.688 -30.7 1400 0.323 162.4 1.413 47.9 0.148 66.4 0.664 -35.1 1600 0.356 151.0 1.201 40.9 0.160 68.0 0.658 -39.3 v ce = 10 v, i c = 10 ma , z o = 50 freque . s 11 s 21 s 12 s 22 mhz mag. ang. mag. an g. mag. ang. mag. ang. 200 0.323 -101.4 8.735 104.9 0.037 49.5 0.711 -8.5 400 0.246 -136.2 4.383 87.4 0.052 65.2 0.693 -13.8 600 0.247 -158.8 3.120 78.0 0.074 67.3 0.696 -16.8 800 0.273 -173.7 2.259 67.2 0.086 68.2 0.679 -20.0 1000 0.299 172.6 1.968 60.1 0.102 69.4 0.671 -23.8 1200 0.314 162.7 1.589 52.5 0.126 70.1 0.663 -26.6 1400 0.353 154.5 1.483 46.3 0.146 70.4 0.648 -33.7 1600 0.380 144.7 1.257 39.5 0.166 70.3 0.648 -38.5 isc website www.iscsemi.cn 4
inchange semiconductor isc rf product specification isc silicon npn rf transistor 2SC3545 isc website www.iscsemi.cn
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